STF18N60M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate input resistance

STF18N60M2
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Q_g
Power MOSFET in a TO-220FP package
Datasheet − production data
Features
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
AM15572v1
Order code V_DS @ T_Jmax R_DS(on) max I_D
STF18N60M2
650 V
0.28 Ω 13 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STF18N60M2
Table 1. Device summary
Marking
Package
18N60M2
TO-220FP
February 2014
This is information on a product in full production.
DocID024729 Rev 3
Packaging
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