STF15N95K5 Datasheet, PDF (1/18 Pages) STMicroelectronics – Ultra low gate charge

STF15N95K5, STP15N95K5,
STW15N95K5
N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5
Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data
Features
3
2
1
TO-220FP
TAB
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Order codes V_DS R_DS(on)max I_D
P_TOT
STF15N95K5
STP15N95K5 950 V
STW15N95K5
0.5 Ω
30 W
12 A
170 W
• TO-220 worldwide best R_DS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
Order codes
STF15N95K5
STP15N95K5
STW15N95K5
Table 1. Device summary
Marking
Package
15N95K5
15N95K5
15N95K5
TO-220FP
TO-220
TO-247
February 2014
This is information on a product in full production.
DocID025280 Rev 2
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