STF15N60M2-EP Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge

STF15N60M2-EP,
STFI15N60M2-EP
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP
Power MOSFET in TO-220FP and I²PAKFP packages
Datasheet - production data
TO-220FP
I²PAKFP (TO-281)
Figure 1: Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Features
Order code
STF15N60M2-EP
STFI15N60M2-EP
VDS@TJmax
650 V
RDS(on)max.
0.378 Ω
ID
11 A
 Extremely low gate charge
 Excellent output capacitance (C_OSS) profile
 Very low turn-off switching losses
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
 Tailored for very high frequency converters
(f > 150 kHz)
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to their strip
layout and improved vertical structure, the
devices exhibit low on-resistance and optimized
switching characteristics with very low turn-off
switching loss, rendering them suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Order code
Marking Package Packaging
STF15N60M2-EP
TO-220FP
15N60M2EP
STFI15N60M2-EP
I²PAKFP
(TO-281)
Tube
January 2015
DocID027373 Rev 1
This is information on a product in full production.
1/15
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