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STF150N10F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness | |||
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STF150N10F7
N-channel 100 V, 0.0036 Ω typ., 65 A, STripFET⢠F7
Power MOSFET in a TO-220FP package
Datasheet â production data
Features
3
2
1
TO-220FP
Order code
VDS RDS(on)max ID PTOT
STF150N10F7 100 V 0.0042 Ω 65 A 35 W
⢠Among the lowest RDS(on) on the market
⢠Excellent figure of merit (FoM)
⢠Low Crss/Ciss ratio for EMI immunity
⢠High avalanche ruggedness
Figure 1. Internal schematic diagram
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*
Applications
⢠Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET⢠F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6
$0Y
Order code
STF150N10F7
Table 1. Device summary
Marking
Package
150N10F7
TO-220FP
August 2014
This is information on a product in full production.
DocID025818 Rev 2
Packaging
Tube
1/13
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