STF13NM60N-H Datasheet, PDF (1/13 Pages) STMicroelectronics – N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in TO-220FP

STF13NM60N-H
N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET
in TO-220FP
Features
Type
V_DSS
(@Tjmax)
R_DS(on)
max
I_D
STF13NM60N-H 650 V
< 0.36 Ω 11 A
t(s) ^{■ 100% avalanche tested}
c _{■ Low input capacitance and gate charge}
du _{■ Low gate input resistance}
Pro _Application
te _{■ Switching applications}
sole _Description
Ob This series of devices implements second
- _{generation MDmesh™ technology. This}
) _{revolutionary Power MOSFET associates a new}
t(s ^{vertical structure to the company’s strip layout to}
c yield one of the world’s lowest on-resistance and
u _{gate charge. It is therefore suitable for the most}
rod ^{demanding high efficiency converters.}
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
lete ^P _3
Obso ^3#
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STF13NM60N-H⁽¹⁾
13NM60N
TO-220FP
Tube
1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as
“halogen-free” . See Section 4: Package mechanical data.
January 2010
Doc ID 16963 Rev 1
1/13
www.st.com
13