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STF13NM06N-H Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate input resistance | |||
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STF13NM60N-H
N-channel 600 V, 0.28 â¦, 11 A MDmesh⢠II Power MOSFET
in TO-220FP
Features
Type
VDSS
(@Tjmax)
STF13NM60N-H 650 V
RDS(on)
max
< 0.36 â¦
ID
11 A
â 100% avalanche tested
â Low input capacitance and gate charge
â Low gate input resistance
Application
â Switching applications
Description
This series of devices implements second
generation MDmesh⢠technology. This
revolutionary Power MOSFET associates a new
vertical structure to the companyâs strip layout to
yield one of the worldâs lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
3#
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STF13NM60N-H(1)
13NM60N
TO-220FP
Tube
1. The device meets ECOPACK® standards, an environmentally-friendly grade of products commonly referred to as
âhalogen-freeâ . See Section 4: Package mechanical data.
January 2010
Doc ID 16963 Rev 1
1/13
www.st.com
13
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