STF13N60M2 Datasheet, PDF (1/14 Pages) STMicroelectronics – Low gate input resistance

STF13N60M2, STFI13N60M2
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Q_g
2
Power MOSFETs in TO-220FP and I PAKFP packages
Datasheet − production data
Features
3
2
1
TO-220FP
1
23
I²PAKFP
(TO-281)
Figure 1. Internal schematic diagram
AM15572v1
Order codes V_DS @ T_Jmax R_DS(on) max I_D
STF13N60M2
STFI13N60M2
650 V
0.38 Ω 11 A
• Extremely low gate charge
• Lower R_DS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q_g. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF13N60M2
STFI13N60M2
Table 1. Device summary
Marking
Package
13N60M2
TO-220FP
2
I PAKFP (TO-281)
Packaging
Tube
March 2014
This is information on a product in full production.
DocID023939 Rev 4
1/14
www.st.com
14