STF12PF06 Datasheet, PDF (1/10 Pages) STMicroelectronics – P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET

STP12PF06
STF12PF06
P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP
STripFET™ II POWER MOSFET
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
STP12PF06
STF12PF06
60 V
60 V
< 0.20 Ω
< 0.20 Ω
12 A
12 A
■ TYPICAL R_DS(on) = 0.18 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
Figure 1:Package
3
2
1
TO-220
3
2
1
TO-220FP
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
Table 2: Order Codes
PART NUMBER
STP12PF06
STF12PF06
MARKING
P12PF06
F12PF06
Table 3: ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
NOTE:For the P-CHANNEL MOSFET actual polarity of voltages
and current has to be reversed.
March 2005
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
STP20PF06
12
8.4
48
60
0.4
Value
60
60
± 20
6
200
STF20PF06
8
5.6
32
225
0.17
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤12A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 12A, V_DD= 25V
Rev. 2.0
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