STF12N65M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STF12N65M2
N-channel 650 V, 0.42 Ω typ., 8 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet - production data
Features



72)3
Figure 1. Internal schematic diagram
Order code
STF12N65M2
V_DS
650 V
R_DS(on) max I_D
0.5 Ω
8A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
Order code
STF12N65M2
AM15572v1
Table 1. Device summary
Marking
Package
12N65M2
TO-220FP
Packaging
Tube
March 2015
This is information on a product in full production.
DocID027318 Rev 2
1/13
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