STF12N120K5 Datasheet, PDF (1/16 Pages) STMicroelectronics – Ultra low gate charge

STF12N120K5,
STFW12N120K5
N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh™ K5
Power MOSFETs in TO-220FP and TO-3PF packages
Datasheet - production data
Features



TO-220FP

TO-3PF



Order code
V_DS R_DS(on) max. I_D P_TOT
STF12N120K5
1200 V
STFW12N120K5
0.69 Ω
40 W
12 A
63 W
• Industry’s lowest R_DS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STF12N120K5
STFW12N120K5
Table 1. Device summary
Marking
Packages
12N120K5
TO-220FP
TO-3PF
Packing
Tube
May 2015
This is information on a product in full production.
DocID026396 Rev 2
1/16
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