STF11N65M2 Datasheet, PDF (1/15 Pages) STMicroelectronics – Extremely low gate charge

STF11N65M2, STFI11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh™ M2
Power MOSFETs in TO-220FP and I²PAKFP packages
Datasheet - production data
TO-220FP
I²PAKFP (TO-281)
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID PTOT
STF11N65M2
650 V
STFI11N65M2
0.68 Ω
7 A 25 W
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
Order code
STF11N65M2
STFI11N65M2
Table 1: Device summary
Marking
Package
11N65M2
TO-220FP
I²PAKFP
Packing
Tube
September 2015
DocID025806 Rev 2
This is information on a product in full production.
1/15
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