STF110N10F7 Datasheet, PDF (1/16 Pages) STMicroelectronics – Ultra low on-resistance

STF110N10F7,
STP110N10F7
N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™
Power MOSFETs in TO-220FP and TO-220 packages
Datasheet - production data
Features
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Order codes V_DS R_DS(on) max I_D P_TOT
STF110N10F7
100 V 0.007 Ω
STP110N10F7
45 A 30 W
110 A 150 W
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
Figure 1. Internal schematic diagram
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Description
These devices utilize the 7^th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
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Order codes
STF110N10F7
STP110N10F7
Table 1. Device summary
Marking
Package
110N10F7
TO-220FP
TO-220
Packaging
Tube
July 2013
This is information on a product in full production.
DocID024058 Rev 2
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