STF10NM60ND Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

STD10NM60ND, STF10NM60ND
STP10NM60ND
N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220
FDmesh™ II Power MOSFET (with fast diode)
Features
Order codes
STD10NM60ND
STF10NM60ND
STP10NM60ND
V_DSS R_DS(on)
@T_Jmax max.
650 V < 0.6 Ω
I_D P_TOT
70 W
8 A 25 W
70 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt avalanche capabilities
Applications
■ Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
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3
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Table 1. Device summary
Order codes
Marking
STD10NM60ND
STF10NM60ND
10NM60ND
STP10NM60ND
Package
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
November 2011
Doc ID 18467 Rev 2
1/19
www.st.com
19