STF10N80K5 Datasheet, PDF (1/14 Pages) STMicroelectronics – Ultra-low gate charge

STF10N80K5
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code V_DS
STF10N80K5 800 V
R_DS(on) max
0.600 Ω
I_D P_TOT
9 A 30 W
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
• Industry’s best R_DS(on)
• Industry’s best figure of merit (FoM)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This very high voltage N-channel Power MOSFET
is designed using MDmesh™ K5 technology
based on an innovative proprietary vertical
structure. The result is a dramatic reduction in on-
resistance and ultra-low gate charge for
applications requiring superior power density and
high efficiency.
Order code
STF10N80K5
Table 1. Device summary
Marking
Package
10N80K5
TO-220FP
Packaging
Tube
November 2014
This is information on a product in full production.
DocID026564 Rev 4
1/14
www.st.com