STF10N65K3 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages

STF10N65K3, STFI10N65K3,
STP10N65K3
N-channel 650 V, 0.75 Ω typ., 10 A Zener-protected SuperMESH3™
Power MOSFET in TO-220FP, I²PAKFP and TO-220 packages
Datasheet − production data
Features
Order codes
STF10N65K3
STFI10N65K3
STP10N65K3
V_DS
650 V
R_DS(on)
max
1Ω
I_D
P_TOT
35 W
10 A
150 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
3
2
1
TO-220FP
TAB
I²PAKFP
3
2
1
TO-220
Figure 1. Internal schematic diagram
'7$%
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
*
6
AM01476v1
Table 1. Device summary
Order codes
STF10N65K3
STFI10N65K3
STP10N65K3
Marking
10N65K3
Package
TO-220FP
I²PAKFP
TO-220
November 2012
This is information on a product in full production.
Doc ID 15732 Rev 3
Packaging
Tube
1/17
www.st.com
17