STF10N62K3 Datasheet, PDF (1/17 Pages) STMicroelectronics – N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™

STF10N62K3, STFI10N62K3,
STI10N62K3, STP10N62K3
N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™
Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages
Datasheet − production data
Features
Type
V_DSS
R_DS(on)
max
I_D
P_w
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
620 V
< 0.75 Ω
8.4 A⁽¹⁾
8.4 A
30 W
125 W
1. Limited by package
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STF10N62K3
STFI10N62K3
STI10N62K3
STP10N62K3
10N62K3
10N62K3
10N62K3
10N62K3
3
2
1
TO-220FP
1
23
I²PAKFP
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
'7$%
*
6
AM01476v1
Package
TO-220FP
I²PAKFP
I²PAK
TO-220
Packaging
Tube
September 2012
This is information on a product in full production.
Doc ID 15640 Rev 4
1/17
www.st.com
17