STF10N60M2 Datasheet, PDF (1/13 Pages) STMicroelectronics – Extremely low gate charge

STF10N60M2
N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STF10N60M2
VDS@TJmax.
650 V
RDS(on) max.
0.60 Ω
ID
7.5 A
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(3)
Order code
STF10N60M2
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
10N60M2
TO-220FP
Packing
Tube
March 2017
DocID024712 Rev 4
This is information on a product in full production.
1/13
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