STF10N105K5 Datasheet, PDF (1/18 Pages) STMicroelectronics – Ultra low gate charge

STF10N105K5, STP10N105K5,
STW10N105K5
N-channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5
Power MOSFETs in TO-220, TO-220FP and TO-247 packages
Datasheet - production data
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Features
Order codes
STF10N105K5
STP10N105K5
STW10N105K5
VDS
1050 V
RDS(on)
max.
ID
PTOT
30 W
1.3 Ω 6 A 130 W
130 W
3
1²
TO-247
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM01476v1
 Industry’s lowest R_DS(on)
 Industry’s best figure of merit (FoM)
 Ultra low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Table 1: Device summary
Order codes Marking Package Packaging
STF10N105K5
STP10N105K5
STW10N105K5
10N105K5
10N105K5
10N105K5
TO-220FP
TO-220
TO-247
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October 2014
DocID026932 Rev 2
This is information on a product in full production.
1/18
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