STF10LN80K5 Datasheet, PDF (1/14 Pages) STMicroelectronics – Ultra-low gate charge

STF10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STF10LN80K5
VDS
800 V
RDS(on) max.
ID
0.63 Ω
8A
 Industry’s lowest R_DS(on) x area
 Industry’s best figure of merit (FoM)
 Ultra-low gate charge
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
S(3)
Order code
STF10LN80K5
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
10LN80K5
TO-220FP
Packing
Tube
December 2015
DocID027751 Rev 3
This is information on a product in full production.
1/14
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