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STF100N6F7 Datasheet, PDF (1/13 Pages) STMicroelectronics – High avalanche ruggedness | |||
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STF100N6F7
N-channel 60 V, 4.6 m⦠typ., 46 A STripFET⢠F7
Power MOSFET in a TO-220FP package
Datasheet - production data
Features
Order code
STF100N6F7
VDS RDS(on) max. ID PTOT
60 V 5.6 m⦠46 A 25 W
72)3
Figure 1. Internal schematic diagram
'
*
⢠Among the lowest RDS(on) on the market
⢠Excellent figure of merit (FoM)
⢠Low Crss/Ciss ratio for EMI immunity
⢠High avalanche ruggedness
Applications
⢠Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET⢠F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
6
$0Y
Order code
STF100N6F7
Table 1. Device summary
Marking
Package
100N6F7
TO-220FP
Packaging
Tube
February 2015
This is information on a product in full production.
DocID027211 Rev 3
1/13
www.st.com
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