STEVAL-TDR009V1 Datasheet, PDF (1/13 Pages) STMicroelectronics – RF power amplifier demonstration board using: 2 x SD2932 N-channel enhancement-mode lateral MOSFETs

STEVAL-TDR009V1
RF power amplifier demonstration board using: 2 x SD2932
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Frequency: 87.5 - 108 MHz
■ Supply voltage: 48 V
■ Output power: 650 W min.
■ Gain: 19.5 dB min.
■ Efficiency: 73 % min.
■ Harmonics < - 36 dBc
■ Gain flatness: ± 0.5 dB max
Description
The STEVAL-TDR009V1 is a RF broadband
power amplifier intended for FM broadcast radio
transmitters over the band 87.5 to 108 MHz using
2 x SD2932 gold metallized N-channel MOS field-
effect transistors.
STEVAL-TDR009V1 is designed in cooperation
with InnovAction s.r.l in italy.
Table 1.
Device summary
Order code
STEVAL-TDR009V1
AM01227v1
April 2010
Doc ID 17347 Rev 1
1/13
www.st.com
13