STEVAL-TDR007V1 Datasheet, PDF (1/11 Pages) STMicroelectronics – 3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E

STEVAL-TDR007V1
3 stage RF power amplifier demonstration board using:
PD57002-E, PD57018-E, 2 x PD57060-E
Features
■ N-channel enhancement-mode lateral
MOSFETs
■ Excellent thermal stability
■ Frequency: 1030 MHz
■ Supply voltage: 36 V
■ Peak power: 200 W typical
■ Input power: 23 dBm
■ Harmonics < -45 dBc
■ Rise and fall time < 100 ns
■ RoHS compliant
Description
The STEVAL-TDR007V1 is a 200 W RF power
amplifier intended for IFF - 1030 MHz interrogator
using PD57002-E + PD57018-E + 2 x PD57060-E
N-channel lateral MOS field-effect transistors.
STEVAL-TDR007V1 is designed in cooperation
with ETSA in France.
Table 1.
Device summary
Order code
STEVAL-TDR007V1
March 2009
Rev 2
1/11
www.st.com
11