STEVAL-IMR002V1 Datasheet, PDF (1/4 Pages) STMicroelectronics – 2 kW/100 V RF demonstration board for 3 T MRI based on the STAC4932B

STEVAL-IMR002V1
2 kW/100 V RF demonstration board for 3 T MRI
based on the STAC4932B
Data brief
Features
■ Output power: 2 kW
■ Supply voltage: 100 V
■ Frequency: 123 MHz
■ Power gain: 19 dB
■ Efficiency: 60%
■ RoHS compliant
Description
The STEVAL-IMR002V1 demonstration board is
based on the new generation of high voltage
DMOS products housed in the STAC^® air cavity
package and capable of delivering an output
power up to 1.2 kW for industrial, scientific, and
medical applications such as 1.5 T and 3 T
magnetic resonance imaging (MRI).
This new air-cavity technology now enables lower
thermal resistance, lower weight, and reduced
cost compared to devices in ceramic packages.
The STEVAL-IMR002V1 demonstration board
implements the design of a 2 kW-100 V, 123 MHz
Class AB peak power amplifier (PPA) for 3 Tesla
MRI applications.
It uses double push-pull bolt-down devices, two
STAC4932B - N-channel MOSFETs, capable of
exceeding 2000 W @ 123 MHz with large signal
gain of 19 dB in Class AB and a drain efficiency of
60%.
It almost doubles the output power of previous
amplifiers using MOSFET transistors in standard
ceramic packages.
December 2011
Doc ID 022609 Rev 1
For further information contact your local STMicroelectronics sales office.
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www.st.com
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