STESB01 Datasheet, PDF (1/14 Pages) STMicroelectronics – ESBT Base Driver

STESB01
Feature summary
■ Controls ESBT base current in every line/load
condition
■ Supply voltage range: 8V to 20 V
■ Storage time controlled by closed loop
architecture (from 150ns to 1.5µs)
■ Under voltage lockout with hysteresis
Description
The STESB01 is a dedicated base current biasing
transistor for the Emitter-Switched Bipolar
Transistor (ESBT) family of power switches. The
device is able to control the ESBT storage time
(from 150ns to 1.5ìs) using closed loop
architecture. This guarantees proper operation of
the ESBT in every line and load condition,
avoiding oversaturation of the device and, at the
same time, ensuring the correct base current
ESBT Base Driver
SOT23-6L
SO-8
when a higher load is required. The storage time
can be adjusted with an external resistor, which
allows maximum flexibility in different applications.
The optimization of the base current value also
reduces the base current losses to minimum level.
Order code
Part number
STESB01STR
STESB01DR
October 2006
Package
SOT23-6L
SO-8
Rev. 3
Packaging
3000 Parts per Reel
2500 Parts per Reel
1/14
www.st.com
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