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STE48NM50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.08ohm - 48A ISOTOP MDmesh™Power MOSFET | |||
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STE48NM50
N-CHANNEL 500V - 0.08⦠- 48A ISOTOP
MDmeshâ¢Power MOSFET
TYPE
VDSS
RDS(on)
ID
STE48NM50
500V
< 0.1â¦
48 A
n TYPICAL RDS(on) = 0.08â¦
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n 100% AVALANCHE TESTED
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh⢠is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Companyâs PowerMESH⢠horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Companyâs proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competitionâs products.
APPLICATIONS
The MDmesh⢠family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
September 2002
Value
500
500
±30
48
30
192
450
3.6
15
â65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1) ISD â¤48A, di/dt â¤400A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX.
1/8
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