|
STE180NE10 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET | |||
|
®
STE180NE10
N-CHANNEL 100V - 4.5 m⦠- 180A ISOTOP
STripFET⢠POWER MOSFET
TYPE
V DSS
RDS(on)
STE180NE10
100 V < 6 mâ¦
s TYPICAL RDS(on) = 4.5 mâ¦
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
ID
180 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VDS
V DGR
VGS
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kâ¦)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(â¢)
Ptot
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
VISO I nsulation Withstand Voltage (AC-RMS)
Ts tg Storage T emperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
November 1999
Value
Un it
100
V
100
V
± 20
V
180
A
119
A
540
A
360
2. 88
W
W /o C
2500
-55 to 150
150
( 1) ISD â¤180 Î, di/dÏ â¤ 200 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
V
oC
oC
1/8
|
▷ |