STDID5B Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 55V - 0.1 ohm - 12A TO-252 STripFET POWER MOSFET

®
STDID5B
N - CHANNEL 55V - 0.1 Ω - 12A TO-252
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STDID5B
55 V
< 0.12 Ω
12 A
s TYPICAL RDS(on) = 0.1 Ω
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX "T4" FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix "T4")
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
VGS
I_D(*)
ID
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
I_DM(•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
EAS(1) Single Pulse Avalanche Energy
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(1) starting Tj = 25 ^oC, ID =12A , VDD = 30V
55
V
55
V
± 20
V
12
A
8
A
48
A
35
0.23
W
W/^oC
25
mJ
-65 to 175
o_C
175
o_C
New RDS(on) spec. starting from July ’98
May 2000
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