STD8NS25 Datasheet, PDF (1/6 Pages) STMicroelectronics – N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY™ MOSFET

STD8NS25
N-CHANNEL 250V - 0.38Ω - 8A DPAK
MESH OVERLAY™ MOSFET
PRELIMINARY DATA
TYPE
V_DSS
R_DS(on)
I_D
STD8NS25
250 V < 0.45 Ω
8A
s TYPICAL R_DS(on) = 0.38 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
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DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2001
Value
Unit
250
V
250
V
± 20
V
8
A
5
A
32
80
0.64
5
209
–65 to 150
150
A
W
W/°C
V/ns
mJ
°C
°C
(1) I_SD≤ 8A, di/dt≤300 A/µs, V_DD≤ V_(BR)DSS, Tj≤T_jMAX
(2) Starting T_j = 25°C, I_AR = 50A, V_DD=20 V
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