STD7NB20 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH™ MOSFET

STD7NB20
STD7NB20-1
N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD7NB20
STD7NB20-1
200 V < 0.40 Ω
7A
200 V < 0.40 Ω
7A
s TYPICAL R_DS(on) = 0.3 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R_DS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2002
Value
200
200
± 30
7
5
28
55
0.44
5.5
– 65 to 150
150
(1) I_SD≤ 7A, di/dt≤200 A/µs, V_DD≤ V_(BR)DSS, Tj≤T_jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
1/10