STD616A-1 Datasheet, PDF (1/5 Pages) STMicroelectronics – HIGH VOLTAGE NPN POWER TRANSISTOR

®
STD616A-1
HIGH VOLTAGE NPN POWER TRANSISTOR
s REVERSE PINS OUT Vs STANDARD IPAK
(TO-251) PACKAGE
s HIGH VOLTAGE CAPABILITY
s HIGH DC CURRENT GAIN
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE
s MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
DESCRIPTION
The STD616A-1 is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage withstand
capability.
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
V _EBO
IC
I_CM
IB
IBM
Ptot
T_stg
T_j
Parameter
Collector-Emit ter Volt age (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (t_p < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
St orage Temperature
Max. Operating Junction Temperature
April 1999
Value
1000
450
12
1.6
2.4
0.8
1.2
20
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o_C
o_C
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