STD60NF3LL Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0075ohm - 60A DPAK STripFET™ II POWER MOSFET

STD60NF3LL
N-CHANNEL 30V - 0.0075Ω - 60A DPAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD60NF3LL
30V <0.0095Ω 60A
s TYPICAL R_DS(on) = 0.0075Ω
s OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
DESCRIPTION
This application specific Power Mosfet is the third
genaration of STMicroelectronics unique “Single
Feature Size™” strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance ang gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
3
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
E_AS (1) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(q) Pulse width limited by safe operating area
April 2002
Value
30
30
± 16
60
43
240
100
0.67
700
– 55 to 175
(1) Starting T_j=25°C, I_D=30A, V_DD=27.5V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/9