STD5NE10L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.3 ohm - 5A - DPAK/IPAK STripFET POWER MOSFET

®
TYPE
STD5NE10L
STD5NE10L
N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK
STripFET™ POWER MOSFET
V _DSS
R_DS(on)
I_D
100 V < 0.4 Ω
5A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.3 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100 % AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ” Single Feature
Size™ ” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
IPAK
TO-251
(Suffix ”-1”)
3
2
1
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVES,etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
V_DGR
V_{G S}
I_D
I_D
I_DM(•)
P_tot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction T emperature
(•) Pulse width limited by safe operating area
October 1998
Value
Unit
100
V
100
V
± 20
V
5
A
3.5
A
20
A
25
W
0.2
W /^o C
6
-65 to 150
150
( 1) ISD ≤ 5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/5