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STD5NE10 Datasheet, PDF (1/3 Pages) STMicroelectronics – N - CHANNEL 100V - 0.32 ohm - 5A TO-251/TO-252 STripFET] POWER MOSFET | |||
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STD5NE10
N - CHANNEL 100V - 0.32 ⦠- 5A TO-251/TO-252
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD5NE10
100 V
< 0.4 â¦
5A
s TYPICAL RDS(on) = 0.32 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE TESTED
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX âT4â FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s MOTOR CONTROL (DISK DRIVES, etc.)
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
3
1
IPAK
TO-251
(Suffix â-1â)
DPAK
TO-252
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS Drain-source Volt age (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 kâ¦)
VG S
ID
ID
IDM(â¢)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
Tstg Storage T emperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
May 1999
Va l u e
100
100
± 20
5
3.5
20
25
0.17
0.6
-65 to 175
175
( 1) ISD ⤠5A, di/dt ⤠200 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/9
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