STD5NB20 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 200V - 0.70ohm - 5A DPAK PowerMESHO MOSFET

®
STD5NB20
N - CHANNEL 200V - 0.70Ω - 5A DPAK
PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD5NB20
200 V < 0.8 Ω
5A
s TYPICAL RDS(on) =0.7 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s FOR TROUGH-HOLE VERSION CONTACT
SALES OFFICE
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH EFFICIENCY DC-DC CONVERTERS
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V_DGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM(•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
December 1998
Value
200
200
± 30
5
3
20
45
0.36
5.5
-65 to 150
150
(1) ISD ≤5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
1/5