STD4N20 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY™ MOSFET

STD4N20
N-CHANNEL 200V - 1.2Ω - 4A DPAK/IPAK
MESH OVERLAY™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD4N20
200 V < 1.5 Ω
4A
s TYPICAL R_DS(on) = 1.2 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s ADD SUFFIX “T4” FOR OREDERING IN TAPE &
REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
February 2001
Value
200
200
±20
4
2.5
16
40
0.32
5
–65 to 150
150
(1)ISD ≤4A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
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