STD45P4LLFAG Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low on-resistance

STD45P4LLF6AG
Automotive-grade P-channel -40 V, 12 mΩ typ., -50 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD45P4LLF6AG
VDS
-40 V
RDS(on) max.
15 mΩ
ID
-50 A
 Designed for automotive applications and
AEC-Q101 qualified
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STD45P4LLF6AG
AM11258v1
Table 1: Device summary
Marking
Package
45P4LLF6
DPAK
Packing
Tape and reel
July 2015
DocID027807 Rev 2
This is information on a product in full production.
1/16
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