STD45NF03L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.011 ohm - 45A DPAK STripFET POWER MOSFET

®
STD45NF03L
N - CHANNEL 30V - 0.011 Ω - 45A DPAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS(o n)}
I_D
STD45NF03L 30 V
< 0.013 Ω
45 A
s TYPICAL RDS(on) = 0.011 Ω
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
30
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
30
VG S
I_D
I_D
I_DM(•)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
± 20
45
31.5
180
55
Derating Factor
0.37
EAS (1) Single Pulse Avalanche Energy
200
T_stg Storage Temperature
-65 to 175
T_j Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 ^oC, ID = 22.5A , VDD = 20V
September 1999
Unit
V
V
V
A
A
A
W
W /^o C
mJ
o_C
o_C
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