STD40P3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low gate charge

STD40P3LLH6
P-channel -30 V, 12 mΩ typ., -40 A STripFET™ H6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD40P3LLH6
VDS
-30 V
RDS(on) max
15 mΩ
ID
-40 A
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ H6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STD40P3LLH6
AM11258v1
Table 1: Device summary
Marking
Package
40P3LLH6
DPAK
Packing
Tape and reel
March 2016
DocID025821 Rev 4
This is information on a product in full production.
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