STD40NF06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.024 ohm - 40A DPAK STripFET™ II POWER MOSFET

STD40NF06
N-CHANNEL 60V - 0.024 Ω - 40A DPAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD40NF06
60 V <0.028 Ω 40 A
s TYPICAL R_DS(on) = 0.024 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL , AUDIO AMPLIFIERS
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
E_AS(2) Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
January 2003
Value
60
60
± 20
40
28
160
85
0.57
10
250
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤40A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 20 A, V_DD = 30 V
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