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STD40NE03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.012 ohm - 40A TO-252 STripFET POWER MOSFET | |||
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STD40NE03L
N - CHANNEL 30V - 0.012 ⦠- 40A TO-252
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(o n)
ID
STD40NE03L 30 V
< 0.016 â¦
40 A
s TYPICAL RDS(on) = 0.012 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX âT4â FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kâ¦)
VG S
ID
ID
IDM(â¢)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipation at Tc = 25 oC
Derating Factor
dv/ dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
(**) Value limi ted only by the package
September 1999
Va l u e
30
30
± 20
20**
20**
160
55
0.37
7
-65 to 175
175
( 1) ISD â¤20A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
Unit
V
V
V
A
A
A
W
W /o C
V/ns
oC
oC
1/8
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