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| STD38NH02L Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STripFET™ III POWER MOSFET | |||
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STD38NH02L
N-CHANNEL 24V - 0.011 ⦠- 38A DPAK/IPAK
STripFET⢠III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD38NH02L
24 V < 0.0135 ⦠38 A
s TYPICAL RDS(on) = 0.011 ⦠@ 10 V
s TYPICAL RDS(on) = 0.015 ⦠@ 5 V
s RDS(ON) * Qg INDUSTRYâs BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX â-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX âT4")
DESCRIPTION
The STD38NH02L utilizes the latest advanced design
rules of STâs proprietary STripFET⢠technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
2
1
IPAK
TO-251
(Suffix â-1â)
3
1
DPAK
TO-252
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(2)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
EAS (3) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
September 2003
Value
30
24
24
± 20
38
27
152
40
0.27
250
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/12
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