STD35P6LLF6 Datasheet, PDF (1/16 Pages) STMicroelectronics – Very low on-resistance

STD35P6LLF6
P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6
Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD35P6LLF6
VDSS
60 V
RDS(on) max.
0.028 Ω
ID
35 A
PTOT
70 W
 Very low on-resistance
 Very low gate charge
 High avalanche ruggedness
 Low gate drive power loss
Applications
 Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STD35P6LLF6
AM11258v1
Table 1: Device summary
Marking
Package
35P6LLF6
DPAK
Packaging
Tape and Reel
April 2017
DocID025600 Rev 3
This is information on a product in full production.
1/16
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