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STD35NF06L Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET™II MOSFET | |||
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STD35NF06L
N-CHANNEL 60V - 0.014 ⦠- 35A DPAK
STripFET⢠II POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD35NF06L
60 V < 0.017 â¦
35 A
s TYPICAL RDS(on) = 0.014 â¦
s LOW THRESHOLD DRIVE
s GATE CHARGE MINIMIZED
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX âT4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Sizeâ¢" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC-AC CONVERTERS
s AUTOMOTIVE SWITCHING APPLICATION
3
1
DPAK
TO-252
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD35NF06LT4
MARKING
D35NF06L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(â¢)
Ptot
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kâ¦)
Gate- source Voltage
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
Drain Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(â¢) Pulse width limited by safe operating area.
November 2003
PACKAGE
TO-252
PACKAGING
TAPE & REEL
Value
60
60
± 16
35
24.5
140
80
0.67
5
280
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD â¤35A, di/dt â¤100A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
(2) Starting Tj = 25 oC, ID = 30A, VDD =30V
1/9
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