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| STD30PF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – P-CHANNEL 30V - 0.025ohm - 24A DPAK/IPAK STripFET™ II POWER MOSFET | |||
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STD30PF03L
STD30PF03L-1
P-CHANNEL 30V - 0.025⦠- 24A DPAK/IPAK
STripFET⢠II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STD30PF03L
STD30PF03L-1
30 V
30 V
< 0.028â¦
< 0.028â¦
24 A
24 A
s TYPICAL RDS(on) = 0.025â¦
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
s LOW GATE CHARGE
s EXTREMELY LOW FIGURE OF MERIT
(RDS(on) * Qg)
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transis-
tor shows extremely high packing density for low
on-resistance and low gate charge.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s DC-DC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID (#)
Drain Current (continuous) at TC = 25°C
ID (#)
Drain Current (continuous) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
(#) Current limited by wire bonding
May 2002
Value
Unit
30
V
30
V
± 16
V
24
A
24
A
96
A
70
W
0.47
W/°C
â 55 to 175
°C
175
°C
Note:For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
1/8
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