STD2NM60 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 600V - 2.8ohm - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET

STD2NM60
STD2NM60-1
N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD2NM60
600V
< 3.2 Ω
2A
STD2NM60-1 600V
< 3.2 Ω
2A
s TYPICAL R_DS(on) = 2.8 Ω
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s 100% AVALANCHE TESTED
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2002
Value
600
600
±30
2
1.26
8
46
0.37
1
15
–65 to 150
150
(1)ISD<2A, di/dt<400A/µs, VDD<V(BR)DSS, TJ<TJMAX
Unit
V
V
V
A
A
A
W
W/°C
kV
V/ns
°C
°C
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