STD2NB50 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh™ MOSFET

STD2NB50
STD2NB50-1
N-CHANNEL 500V - 5Ω - 1A DPAK / IPAK
PowerMesh™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD2NB50
STD2NB50-1
500V
< 6Ω
1A
500V
< 6Ω
1A
s TYPICAL R_DS(on) = 5 Ω
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
DPAK
3
2
1
IPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s SWITH MODE POWER SUPPLIES (SMPS)
s LIGHTING FOR INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
September 2001
Value
500
500
± 30
1
0.63
4
40
0.32
3.5
–65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1)I_SD ≤1A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
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