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STD25NE03L Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET | |||
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STD25NE03L
N - CHANNEL 30V - 0.019 ⦠- 25A - TO-251/TO-252
STripFET⢠POWER MOSFET
TYPE
VDSS
RDS(o n)
STD25NE03L 30 V < 0.025 â¦
s TYPICAL RDS(on) = 0.019 â¦
s 100% AVALANCHE TESTED
s LOW GATE CHARGE
s APPLICATION ORIENTED
CHARACTERIZATION
ID
25 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique âSingle Feature
Sizeâ¢â strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix â-1â)
3
1
DPAK
TO-252
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
VDS
VDGR
VG S
ID
ID
Drain-source Volt age (VGS = 0)
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(â¢)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage T emperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
Va l u e
30
30
± 20
20**
18**
100
45
0.3
-65 to 175
175
(**) Value limited only by the package
March 1999
Unit
V
V
V
A
A
A
W
W /o C
oC
oC
1/9
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