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STD20NE03L Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET | |||
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STD20NE03L
N - CHANNEL ENHANCEMENT MODE
â SINGLE FEATURE SIZE⢠â POWER MOSFET
TYPE
ST D20NE03L
VDSS
30 V
RDS(on )
< 0.020 â¦
ID
20 A
s TYPICAL RDS(on) = 0.016 â¦
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE A 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique âSingle Feature Size⢠â
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix â-1â)
3
1
DPAK
TO-252
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(â¢) Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tst g St orage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
(**) Value limited only by the package
December 1997
Va l u e
Unit
30
V
30
V
± 15
V
20**
A
20**
A
100
A
50
0.33
W
W/oC
7
-65 to 175
175
(1) ISD ⤠40 A, di/dt ⤠300 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
V/ns
oC
oC
1/9
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