STD1NA60 Datasheet, PDF (1/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD1NA60
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STD1NA60
VDSS
600 V
R DS( on)
<8Ω
ID
1.6 A
s TYPICAL R_DS(on) = 7.2 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
s HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s MOTOR CONTROL, AUDIO AMPLIFIERS
s INDUSTRIAL ACTUATORS
s DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
V_{D S} Drain-source Voltage (V_GS = 0)
VDG R Drain- gate Voltage (RGS = 20 kΩ)
V_GS Gate-source Voltage
I_D
Drain Current (continuous) at T _c = 25 ^oC
ID
Drain Current (continuous) at T c = 100 ^oC
I_{D M}(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
Value
600
600
± 30
1.6
1
6.4
40
0. 32
-65 to 150
150
Unit
V
V
V
A
A
A
W
W /^o C
o_C
o_C
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