STD19NE06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.042 W - 19A IPAK/DPAK STripFET POWER MOSFET

STD19NE06
N-CHANNEL 60V - 0.042 Ω - 19A IPAK/DPAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD19NE06
60 V <0.050 Ω 19 A
s TYPICAL R_DS(on) = 0.042 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175 ^oC OPERATING TEMPERATURE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•)
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽¹⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 2002
.
Value
60
60
± 20
19
13.5
76
70
0.46
1.45
-55 to 175
(1) Starting Tj = 25 ^oC, ID = 30A, VDD = 30 V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
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